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Cambridge cf4 device

Cambridge cf4 device

Lead-Zirconate-Titanate (PZT) films were etched with CF 4 /Ar mixed gases in high-density plasmas. Etch characteristics of the PZT film were investigated by using in-situ plasma diagnostic tools in conjunction with the surface analysis after etching. Densities of ionic species such as F + and CF x + (x=1∼3) and their ion energy distributions within the plasma were measured by a mass ...

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  • Dry Etching of PZT Films with CF4/Ar High - Cambridge Core

    Lead-Zirconate-Titanate (PZT) films were etched with CF 4 /Ar mixed gases in high-density plasmas. Etch characteristics of the PZT film were investigated by using in-situ plasma diagnostic tools in conjunction with the surface analysis after etching. Densities of ionic species such as F + and CF x + (x=1∼3) and their ion energy distributions within the plasma were measured by a massAuthor: Chanro Park, Jun Hee Cho, Chang Ju Choi, Yeo Song Seol, Il Hyun Choi

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  • Anisotropic Reactive Ion Etching of - cambridge.org

    2011-2-26Anisotropic Reactive Ion Etching of Submicron W Features In CF4 or SF6 Plasmas - Volume 240 - T. R. Fullowan, F. Ren, S. J. Pearton, G. E. Mahoney, R. L. KostelakAuthor: T. R. Fullowan, F. Ren, S. J. Pearton, G. E. Mahoney, R. L. Kostelak

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  • Laser-Induced Fluorescence Diagnostics of CF4/O2/H2

    Planar laser-induced fluorescence of CF2 in O2/CF4 and O2/C2F6 chamber-cleaning plasmas: Spatial uniformity and comparison to electrical measurements. Journal of Vacuum Science Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue. 2, p. 517.

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  • Comparisons of Gallium Nitride and Indium - Cambridge Core

    We present a comparative study of the effects of low power reactive ion etching (RIE) on GaN and InN. This new, highly chemical, dry etching, using CF 4 and Ar, has been developed for thin nitride films grown at low temperature in our laboratories. GaN films were grown by remote plasma enhanced-laser induced chemical vapor deposition and InN films were grown by radio-frequency RF reactive

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  • CF4 plasma treatment-assisted inkjet printing for color

    The device exhibited a near-zero turn-on voltage, a steep onset, and a low off current (<10-13A). A low threshold voltage of 0.37 V and sub-threshold swing of 0.26 Vldecade was also achieved.

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  • Gaseous Radiation Detectors by Fabio Sauli - Cambridge Core

    Book description. Widely used in high-energy and particle physics, gaseous radiation detectors are undergoing continuous development. The first part of this book provides a solid background for understanding the basic processes leading to the detection and tracking of

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  • Deposition and Characterization of Si

    2014-6-12The strain may be compressive or tensile. Its magnitude and uniformity may be measured by using surface micro machining with test structures which require a single photomask level and use Euler buckling. Anneal cycles may be used to convert compressive strain to tensile or zero strain.

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  • Doo-Seung UM | PostDoc Position | Doctor of Engineering

    Doo-Seung Um currently works at the Department of Engineering, University of Cambridge. Doo-Seung does research in Electronic Engineering, Manufacturing Engineering and Materials Engineering.Title: Doctor of Engineering

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  • CF4 plasma treatment-assisted inkjet printing for color

    2011-9-21CF. 4. plasma treatment-assisted inkjet printing for color pixel flexible display. G Tortissier1, P Ginet2, B Daunay1, L Jalabert1, P Lambert1, B Kim1, H Fujita1 and H Toshiyoshi1,3. Published 21 September 2011 • 2011 IOP Publishing Ltd. Journal of Micromechanics and Microengineering ,

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  • Understanding CO2/CH4 Separation in Pristine and Defective

    2020-11-17The separation of CO2/CH4 gas mixtures is a key challenge for the energy sector and is essential for the efficient upgrading of natural gas and biogas. A new emerging field, that of metal–organic framework nanosheets (MONs), has shown the potential to outperform conventional separation methods and bulk metal–organic frameworks (MOFs). In this work, we model the

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