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Mitsubishi Power sf6 o2 process

Mitsubishi Power sf6 o2 process

Mitsubishi Electric Corporation has developed two technologies for gas-insulated switchgear. An arc-cooling technology achieves a 25 percent improvement in the interruption of electrical current in sulfur-fluoride (SF6) gas-insulated switchgear used in high-voltage power systems.

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  • Processand Reliabilityof SF6/O2 PlasmaEtched Copper TSVs

    2015-6-18Figure 1. Effects of process parameters on the Si etch rate. When testing the effects of one parameter on the rate, the other two are kept constant. It has previously been determined that the effect of O2 on the SF6 plasma is a dramatic increase in the F atom concentration and a subsequent decrease in lateral etching [5].

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  • Theoretical study of the neutral decomposition of SF6 in

    2016-8-26Sauers I 1988 By-product formation in spark breakdown of SF6/O2 mixtures Plasma Chem. Plasma Process. 8 247–62. Crossref SO2F2 of SF6 decomposition in power equipment J.Phys. D: Appl. Phys. 49 155502. IOPscience. Meng S, Chung S, Martin J,Cited by: 39

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  • Experimental investigation of SF6–O2 plasma for the

    This study examines the impact of varying the concentrations of oxygen/fluorine and the operating pressure in an SF6–O2 plasma in two capacitively coupled plasma etch chambers with different geometries. Silicon wafers were used to investigate the anisotropic nature of the etch profiles. power and process duration were kept constant, and

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  • SF6 handling End of Life Services Quantitative

    SF6 handling End of Life Services Quantitative. Jun 29, 2020The end-of-life handling has the key role. Network extension effects are also significant. Business as usual would lead to an increase of about 40% of the SF6 banked volume in MV switchgear until 2050.

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  • Decomposition of SF6 in an RF Plasma Environment

    2018-6-12the applied power was the most important parameter and positively affects the decomposition fraction of re-actants in an RF plasma reactor.13 Figure 2 shows that when no oxygen was added to the reactor (feed O 2 /SF 6 ratio = 0.0), η SF6 clearly increased from 37.79 to 95.68% because of an increase in power from 5 to 20 W. When the power

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  • Mitsubishi Electric Develops New Gas-insulated Switchgear

    Mitsubishi Electric Corporation has developed two technologies for gas-insulated switchgear. An arc-cooling technology achieves a 25 percent improvement in the interruption of electrical current in sulfur-fluoride (SF6) gas-insulated switchgear used in high-voltage power systems.

    Get Price
  • A Kinetic Model for Plasma Etching Silicon in a SF6/O2 RF

    Abstract: Time-dependent Boltzmann electron distribution calculations have been made at constant power and pressure in a SF6/O2 plasma with a varying oxygen mole fraction. The results show that as the oxygen fraction increases in a SF6/O2 plasma, the number of high-energy electrons in the tail of the electron distribution and the mean electron energy both increase significantly while the

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  • Did anyone have experience in etching SiO2 with SF6 in ICP

    The gasese we have are: SF6(0-100sccm), O2(0-20sccm), Ar(0-5sccm), and C4F8. my sample is 3um SiO2 deposited on the surface of Si wafer. The recipe I designed for 3um SiO2 etching is:

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  • $QLVRWURSLF5HDFWLYH,RQ(WFKLQJRI6LOLFRQ8VLQJ6)

    For the optimization of the RIE process the SF6 flow, the O2 flow, the CHF3 flow, the pressure, and the RF power have been chosen as the process variables. These process vari- ables have been varied within the limits of our etching sys- tem. The temperature of the oil bath that controls the

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  • Etching mechanism of the single-step through-silicon-via

    2015-4-22ous etching process; (2) high top power and bottom bias power; (3) multiple materials, including dielectrics, conduct-ing films, and silicon, can be etched in this tool in-situ. Therefore, capital cost and cycle time for TSV etching can be reduced by avoiding the need for multiple etch systems.

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