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ge Converter Station leakage

2021-2-18In hetrostructure field-effect transistors (HFETs) the gate leakage is usually attributed to the high density of traps residing within the barrier. The gate leakage of GaN HFETs has been so far observed to remain at higher levels compared with the other counterparts such as GaAs. Leakage current is generally measured in microamperes.

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  • Leakage (electronics) - Wikipedia

    2021-2-18In hetrostructure field-effect transistors (HFETs) the gate leakage is usually attributed to the high density of traps residing within the barrier. The gate leakage of GaN HFETs has been so far observed to remain at higher levels compared with the other counterparts such as GaAs. Leakage current is generally measured in microamperes.

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